IPW65R080CFD INFINEON TECHNOLOGIES MOSFET N-CH 700V 43.3A TO247 N-Channel 700V 43.3A (Tc) 391W (Tc) Through Hole PG-TO247-3

ProducentINFINEON TECHNOLOGIES
Part Number

IPW65R080CFD (IPW65R080CFD)

Specifications

MOSFET N-CH 700V 43.3A TO247 N-Channel 700V 43.3A (Tc) 391W (Tc) Through Hole PG-TO247-3

Unit Price7,73 EUR
Minimum Order Quantity240
Tariff No.
Lead Time112 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series CoolMOS™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 700V Current - Continuous Drain (Id) @ 25°C 43.3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4.5V @ 1.76mA Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 5030pF @ 100V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 391W (Tc) Rds On (Max) @ Id, Vgs 80 mOhm @ 17.6A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO247-3 Package / Case TO-247-3
Datasheets
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