IPP023NE7N3 G INFINEON TECHNOLOGIES MOSFET N-CH 75V 120A TO220 N-Channel 75V 120A (Tc) 300W (Tc) Through Hole PG-TO220-3-1
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| Producent | INFINEON TECHNOLOGIES | | Part Number | IPP023NE7N3 G (IPP023NE7N3G) |
| Specifications | MOSFET N-CH 75V 120A TO220 N-Channel 75V 120A (Tc) 300W (Tc) Through Hole PG-TO220-3-1 |
| Unit Price | 4,01 EUR |
| Minimum Order Quantity | 500 |
| Tariff No. | |
| Lead Time | 84 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series OptiMOS™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 3.8V @ 273µA Gate Charge (Qg) (Max) @ Vgs 206nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 14400pF @ 37.5V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 300W (Tc) Rds On (Max) @ Id, Vgs 2.3 mOhm @ 100A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3-1 Package / Case TO-220-3 |
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