IPP80N08S2L-07 INFINEON TECHNOLOGIES MOSFET N-CH 75V 80A TO220-3 N-Channel 75V 80A (Tc) 300W (Tc) Through Hole PG-TO220-3-1

ProducentINFINEON TECHNOLOGIES
Part Number

IPP80N08S2L-07 (IPP80N08S2L07)

Specifications

MOSFET N-CH 75V 80A TO220-3 N-Channel 75V 80A (Tc) 300W (Tc) Through Hole PG-TO220-3-1

Unit Price2,41 EUR
Minimum Order Quantity500
Tariff No.
Lead Time98 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series OptiMOS™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 233nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 5400pF @ 25V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 300W (Tc) Rds On (Max) @ Id, Vgs 7.1 mOhm @ 80A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3-1 Package / Case TO-220-3
Datasheets
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