IPD80R4K5P7ATMA1 INFINEON TECHNOLOGIES MOSFET N-CH 800V 1.5A DPAK N-Channel 800V 1.5A (Tc) 13W (Tc) Surface Mount TO-252

ProducentINFINEON TECHNOLOGIES
Part Number

IPD80R4K5P7ATMA1 (IPD80R4K5P7ATMA1)

Specifications

MOSFET N-CH 800V 1.5A DPAK N-Channel 800V 1.5A (Tc) 13W (Tc) Surface Mount TO-252

Unit Price0,78 EUR
Minimum Order Quantity1
Tariff No.
Lead Time112 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series CoolMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 1.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 3.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs 4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 80pF @ 500V Vgs (Max) ±20V FET Feature Super Junction Power Dissipation (Max) 13W (Tc) Rds On (Max) @ Id, Vgs 450 mOhm @ 4.5A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheets
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