SPP17N80C3 INFINEON TECHNOLOGIES MOSFET N-CH 800V 17A TO-220AB N-Channel 800V 17A (Tc) 208W (Tc) Through Hole PG-TO220-3-1

ProducentINFINEON TECHNOLOGIES
Part Number

SPP17N80C3 (SPP17N80C3)

Specifications

MOSFET N-CH 800V 17A TO-220AB N-Channel 800V 17A (Tc) 208W (Tc) Through Hole PG-TO220-3-1

Unit Price3,42 EUR
Minimum Order Quantity500
Tariff No.
Lead Time112 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series CoolMOS™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 17A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs 177nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2320pF @ 25V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 208W (Tc) Rds On (Max) @ Id, Vgs 290 mOhm @ 11A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3-1 Package / Case TO-220-3
Datasheets
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