IPD80R1K4P7ATMA1 INFINEON TECHNOLOGIES MOSFET N-CH 800V 4A DPAK N-Channel 800V 4A (Tc) 32W (Tc) Surface Mount TO-252
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| Producent | INFINEON TECHNOLOGIES | | Part Number | IPD80R1K4P7ATMA1 (IPD80R1K4P7ATMA1) |
| Specifications | MOSFET N-CH 800V 4A DPAK N-Channel 800V 4A (Tc) 32W (Tc) Surface Mount TO-252 |
| Unit Price | 0,62 EUR |
| Minimum Order Quantity | 2.5 |
| Tariff No. | |
| Lead Time | 112 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series CoolMOS™ Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 3.5V @ 700µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 250pF @ 500V Vgs (Max) ±20V FET Feature Super Junction Power Dissipation (Max) 32W (Tc) Rds On (Max) @ Id, Vgs 1.4 Ohm @ 1.4A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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