IPD80R1K0CEATMA1 INFINEON TECHNOLOGIES MOSFET N-CH 800V 5.7A TO252-3 N-Channel 800V 5.7A (Tc) 83W (Tc) Surface Mount PG-TO252-3
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| Producent | INFINEON TECHNOLOGIES | | Part Number | IPD80R1K0CEATMA1 (IPD80R1K0CEATMA1) |
| Specifications | MOSFET N-CH 800V 5.7A TO252-3 N-Channel 800V 5.7A (Tc) 83W (Tc) Surface Mount PG-TO252-3 |
| Unit Price | 1,32 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 42 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series CoolMOS™ CE Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 5.7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 785pF @ 100V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 83W (Tc) Rds On (Max) @ Id, Vgs 950 mOhm @ 3.6A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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