IPT012N08N5ATMA1 INFINEON TECHNOLOGIES MOSFET N-CH 80V 300A 8HSOF N-Channel 80V 300A (Tc) 375W (Tc) Surface Mount PG-HSOF-8-1

ProducentINFINEON TECHNOLOGIES
Part Number

IPT012N08N5ATMA1 (IPT012N08N5ATMA1)

Specifications

MOSFET N-CH 80V 300A 8HSOF N-Channel 80V 300A (Tc) 375W (Tc) Surface Mount PG-HSOF-8-1

Unit Price5,16 EUR
Minimum Order Quantity1
Tariff No.
Lead Time56 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series OptiMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 300A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Vgs(th) (Max) @ Id 3.8V @ 280µA Gate Charge (Qg) (Max) @ Vgs 223nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 17000pF @ 40V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 375W (Tc) Rds On (Max) @ Id, Vgs 1.2 mOhm @ 150A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-HSOF-8-1 Package / Case 8-PowerSFN
Datasheets
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