IPP100N08N3GHKSA1 INFINEON TECHNOLOGIES MOSFET N-CH 80V 70A TO220-3 N-Channel 80V 70A (Tc) 100W (Tc) Through Hole PG-TO-220-3

ProducentINFINEON TECHNOLOGIES
Part Number

IPP100N08N3GHKSA1 (IPP100N08N3GHKSA1)

Specifications

MOSFET N-CH 80V 70A TO220-3 N-Channel 80V 70A (Tc) 100W (Tc) Through Hole PG-TO-220-3

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Minimum Order Quantity500
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DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series OptiMOS™ Packaging Tube Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 70A (Tc) Vgs(th) (Max) @ Id 3.5V @ 46µA Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2410pF @ 40V FET Feature - Power Dissipation (Max) 100W (Tc) Rds On (Max) @ Id, Vgs 10 mOhm @ 46A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO-220-3 Package / Case TO-220-3
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