IPB65R660CFDAATMA1 INFINEON TECHNOLOGIES MOSFET N-CH TO263-3 N-Channel 650V 6A (Tc) 62.5W (Tc) Surface Mount PG-TO263
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| Producent | INFINEON TECHNOLOGIES | | Part Number | IPB65R660CFDAATMA1 (IPB65R660CFDAATMA1) |
| Specifications | MOSFET N-CH TO263-3 N-Channel 650V 6A (Tc) 62.5W (Tc) Surface Mount PG-TO263 |
| Unit Price | 0,87 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 112 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series Automotive, AEC-Q101, CoolMOS™ Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Vgs(th) (Max) @ Id 4.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 543pF @ 100V FET Feature - Power Dissipation (Max) 62.5W (Tc) Rds On (Max) @ Id, Vgs 660 mOhm @ 3.2A, 10V Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO263 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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