IPS70R950CEAKMA1 INFINEON TECHNOLOGIES MOSFET NCH 700V 7.4A TO251 N-Channel 700V 7.4A (Tc) 68W (Tc) Through Hole PG-TO251

ProducentINFINEON TECHNOLOGIES
Part Number

IPS70R950CEAKMA1 (IPS70R950CEAKMA1)

Specifications

MOSFET NCH 700V 7.4A TO251 N-Channel 700V 7.4A (Tc) 68W (Tc) Through Hole PG-TO251

Unit Price0,70 EUR
Minimum Order Quantity1.5
Tariff No.
Lead Time42 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series CoolMOS™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 700V Current - Continuous Drain (Id) @ 25°C 7.4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 3.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs 15.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 328pF @ 100V Vgs (Max) ±20V FET Feature Super Junction Power Dissipation (Max) 68W (Tc) Rds On (Max) @ Id, Vgs 950 mOhm @ 1.5A, 10V Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO251 Package / Case TO-251-3 Stub Leads, IPak
Datasheets
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