IPA80R1K4CEXKSA2 INFINEON TECHNOLOGIES MOSFET NCH 800V 3.9A TO220-3 N-Channel 800V 3.9A (Tc) 31W (Tc) Through Hole PG-TO220 Full Pack

ProducentINFINEON TECHNOLOGIES
Part Number

IPA80R1K4CEXKSA2 (IPA80R1K4CEXKSA2)

Specifications

MOSFET NCH 800V 3.9A TO220-3 N-Channel 800V 3.9A (Tc) 31W (Tc) Through Hole PG-TO220 Full Pack

Unit Price1,05 EUR
Minimum Order Quantity500
Tariff No.
Lead Time42 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series CoolMOS™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 3.9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 3.9V @ 240µA Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 570pF @ 100V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 31W (Tc) Rds On (Max) @ Id, Vgs 1.4 Ohm @ 2.3A, 10V Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220 Full Pack Package / Case TO-220-3 Full Pack
Datasheets
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