SPD04P10PLGBTMA1 INFINEON TECHNOLOGIES MOSFET P-CH 100V 4.2A TO252-3 P-Channel 100V 4.2A (Tc) 38W (Tc) Surface Mount PG-TO252-3
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| Producent | INFINEON TECHNOLOGIES | | Part Number | SPD04P10PLGBTMA1 (SPD04P10PLGBTMA1) |
| Specifications | MOSFET P-CH 100V 4.2A TO252-3 P-Channel 100V 4.2A (Tc) 38W (Tc) Surface Mount PG-TO252-3 |
| Unit Price | 0,53 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 84 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series SIPMOS® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 4.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 2V @ 380µA Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 372pF @ 25V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 38W (Tc) Rds On (Max) @ Id, Vgs 850 mOhm @ 3A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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