BSP92PH6327XTSA1 INFINEON TECHNOLOGIES MOSFET P-CH 250V 260MA 4SOT223 P-Channel 250V 260mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

ProducentINFINEON TECHNOLOGIES
Part Number

BSP92PH6327XTSA1 (BSP92PH6327XTSA1)

Specifications

MOSFET P-CH 250V 260MA 4SOT223 P-Channel 250V 260mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

Unit Price0,49 EUR
Minimum Order Quantity1
Tariff No.
Lead Time70 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series SIPMOS® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 260mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.8V, 10V Vgs(th) (Max) @ Id 2V @ 130µA Gate Charge (Qg) (Max) @ Vgs 5.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 104pF @ 25V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 1.8W (Ta) Rds On (Max) @ Id, Vgs 12 Ohm @ 260mA, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-SOT223-4 Package / Case TO-261-4, TO-261AA
Datasheets
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