BSZ180P03NS3EGATMA1 INFINEON TECHNOLOGIES MOSFET P-CH 30V 39.6A TSDSON-8 P-Channel 30V 9A (Ta), 39.5A (Tc) 2.1W (Ta), 40W (Tc) Surface Mount PG-TSDSON-8
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| Producent | INFINEON TECHNOLOGIES | | Part Number | BSZ180P03NS3EGATMA1 (BSZ180P03NS3EGATMA1) |
| Specifications | MOSFET P-CH 30V 39.6A TSDSON-8 P-Channel 30V 9A (Ta), 39.5A (Tc) 2.1W (Ta), 40W (Tc) Surface Mount PG-TSDSON-8 |
| Unit Price | 0,55 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 70 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series OptiMOS™ Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 9A (Ta), 39.5A (Tc) Vgs(th) (Max) @ Id 3.1V @ 48µA Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2220pF @ 15V FET Feature - Power Dissipation (Max) 2.1W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs 18 mOhm @ 20A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TSDSON-8 Package / Case 8-PowerTDFN |
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