IPP80P03P4L04AKSA1 INFINEON TECHNOLOGIES MOSFET P-CH 30V 80A TO220-3 P-Channel 30V 80A (Tc) 137W (Tc) Through Hole PG-TO220-3-1

ProducentINFINEON TECHNOLOGIES
Part Number

IPP80P03P4L04AKSA1 (IPP80P03P4L04AKSA1)

Specifications

MOSFET P-CH 30V 80A TO220-3 P-Channel 30V 80A (Tc) 137W (Tc) Through Hole PG-TO220-3-1

Unit Price1,32 EUR
Minimum Order Quantity50
Tariff No.
Lead Time98 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series OptiMOS™ Packaging Tube Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 2V @ 253µA Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 11300pF @ 25V Vgs (Max) +5V, -16V FET Feature - Power Dissipation (Max) 137W (Tc) Rds On (Max) @ Id, Vgs 4.4 mOhm @ 80A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3-1 Package / Case TO-220-3
Datasheets
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