BSS83P H6327 INFINEON TECHNOLOGIES MOSFET P-CH 60V 0.33A SOT23 P-Channel 60V 330mA (Ta) 360mW (Ta) Surface Mount PG-SOT23-3

ProducentINFINEON TECHNOLOGIES
Part Number

BSS83P H6327 (BSS83PH6327)

Specifications

MOSFET P-CH 60V 0.33A SOT23 P-Channel 60V 330mA (Ta) 360mW (Ta) Surface Mount PG-SOT23-3

Unit Price632,02 EUR
Minimum Order Quantity3
Tariff No.
Lead Time70 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series SIPMOS® Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 330mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 2V @ 80µA Gate Charge (Qg) (Max) @ Vgs 3.57nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 78pF @ 25V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 360mW (Ta) Rds On (Max) @ Id, Vgs 2 Ohm @ 330mA, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-SOT23-3 Package / Case TO-236-3, SC-59, SOT-23-3
Datasheets
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