SPB18P06P G INFINEON TECHNOLOGIES MOSFET P-Ch -60V 18.6A D2PAK-2

ProducentINFINEON TECHNOLOGIES
Part Number

SPB18P06P G (SPB18P06PG)

Specifications

MOSFET P-Ch -60V 18.6A D2PAK-2

Unit Price1,49 EUR
Minimum Order Quantity1
Tariff No.
Lead Time8 weeks
Weight and Dimension
DescriptionInfineon Product Category: MOSFET RoHS:  Details Brand: Infineon Technologies Id - Continuous Drain Current: 18.6 A Vds - Drain-Source Breakdown Voltage: - 60 V Rds On - Drain-Source Resistance: 130 mOhms Transistor Polarity: P-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 80 W Mounting Style: SMD/SMT Package/Case: D2PAK-3 Packaging: Reel Channel Mode: Enhancement Configuration: Single Fall Time: 11 ns Minimum Operating Temperature: - 55 C Rise Time: 5.8 ns Series: SPB18P06 Factory Pack Quantity: 1000 Tradename: SIPMOS Typical Turn-Off Delay Time: 24.5 ns Part # Aliases: SP000102181 SPB18P06PGATMA1
Datasheets
E-shop Coming Soon

E-shop Coming Soon
E-shop Coming Soon

E-shop Coming Soon
Related Parts
© 2015 WorldHNews.com