SPD18P06P G INFINEON TECHNOLOGIES MOSFET P-CH 60V 18.6A TO252-3 P-Channel 60V 18.6A (Tc) 80W (Tc) Surface Mount PG-TO252-3
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| Producent | INFINEON TECHNOLOGIES | | Part Number | SPD18P06P G (SPD18P06PG) |
| Specifications | MOSFET P-CH 60V 18.6A TO252-3 P-Channel 60V 18.6A (Tc) 80W (Tc) Surface Mount PG-TO252-3 |
| Unit Price | 1,02 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 84 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series SIPMOS® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 18.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 860pF @ 25V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 80W (Tc) Rds On (Max) @ Id, Vgs 130 mOhm @ 13.2A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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