BSS225H6327XTSA1 INFINEON TECHNOLOGIES MOSFET SMALL SIGNAL+P-CH
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| Producent | INFINEON TECHNOLOGIES | | Part Number | BSS225H6327XTSA1 (BSS225H6327XTSA1) |
| Specifications | MOSFET SMALL SIGNAL+P-CH |
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| Minimum Order Quantity | 1 |
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| Description | Infineon Product Category: MOSFET RoHS: Details Id - Continuous Drain Current: 90 mA Vds - Drain-Source Breakdown Voltage: 600 V Rds On - Drain-Source Resistance: 45 Ohms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Vgs th - Gate-Source Threshold Voltage: 1.3 V Qg - Gate Charge: 3.9 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1 W Mounting Style: SMD/SMT Package/Case: SOT-89-3 Packaging: Reel Brand: Infineon Technologies Channel Mode: Enhancement Ciss - Input Capacitance: 99 pF Configuration: Single Fall Time: 41 ns Forward Transconductance - Min: 50 mS Minimum Operating Temperature: - 55 C Rise Time: 38 ns Typical Turn-Off Delay Time: 62 ns |
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