BFY450 (P) INFINEON TECHNOLOGIES RF Bipolar Transistors HiRel NPN Silicon RF Transistor
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| Producent | INFINEON TECHNOLOGIES | | Part Number | BFY450 (P) (BFY450P) |
| Specifications | RF Bipolar Transistors HiRel NPN Silicon RF Transistor |
| Unit Price | 406,79 EUR |
| Minimum Order Quantity | 1 |
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| Description | Infineon Product Category: RF Bipolar Transistors RoHS: No Transistor Type: Bipolar Technology: Si Transistor Polarity: NPN Frequency: 22000 MHz DC Collector/Base Gain hFE Min: 50 at 20 mA at 1 V Collector- Emitter Voltage VCEO Max: 4.5 V Emitter- Base Voltage VEBO: 1.5 V Continuous Collector Current: 100 mA Maximum Operating Temperature: + 150 C Configuration: Single Dual Emitter Power Dissipation: 450 mW Mounting Style: SMD/SMT Package/Case: Micro-X Packaging: Bulk Brand: Infineon Technologies Maximum DC Collector Current: 0.1 A Minimum Operating Temperature: - 65 C Factory Pack Quantity: 1 Part # Aliases: BFY450PZZZA1 |
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