IRFH8337TR2PBF INTERNATIONAL RECTIFIER International Rectifier IRFH8337TR2PBF N-channel MOSFET Transistor, 35 A, 30 V, 8-pin PQFN

ProducentINTERNATIONAL RECTIFIER
Part Number

IRFH8337TR2PBF (IRFH8337TR2PBF)

Specifications

International Rectifier IRFH8337TR2PBF N-channel MOSFET Transistor, 35 A, 30 V, 8-pin PQFN

Unit Price1,21 EUR
Minimum Order Quantity1
Tariff No.
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Weight and Dimension
DescriptionCategoryPower MOSFET Channel ModeEnhancement Channel TypeN ConfigurationQuad Drain, Triple Source Dimensions5.85 x 5 x 1.17mm Height1.17mm Length5.85mm Maximum Continuous Drain Current35 A Maximum Drain Source Resistance19.9 mΩ Maximum Drain Source Voltage30 V Maximum Gate Source Voltage±20 V Maximum Operating Temperature+150 °C Maximum Power Dissipation27 W Minimum Operating Temperature-55 °C Mounting TypeSurface Mount Number of Elements per Chip1 Package TypePQFN Pin Count8 Typical Gate Charge @ Vgs10 nC V @ 10 Typical Input Capacitance @ Vds790 pF V @ 10 Typical Turn-Off Delay Time5.7 ns Typical Turn-On Delay Time6.4 ns Width5mm Product Details N-Channel Power MOSFET 8A to 12A, International Rectifier International Rectifier's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. MOSFET Transistors, International Rectifier International Rectifier’s comprehensive portfolio of rugged single- and dual- N-channel and P-channel devices offers fast switching speeds and addresses a wide variety of power requirements in applications ranging from AC-DC and DC-DC power supplies to audio and consumer electronics and from motor control to lighting and home appliances.
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