IXBT6N170 Ixys IGBT Transistors 12 Amps 1700V 3.6 Rds
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Producent | Ixys | Part Number | IXBT6N170 (IXBT6N170) |
Specifications | IGBT Transistors 12 Amps 1700V 3.6 Rds |
Unit Price | 8,04 EUR |
Minimum Order Quantity | 1 |
Tariff No. | |
Lead Time | 2 weeks |
Weight and Dimension | 0.0045 Kg |
Description | IXYS Product Category: IGBT Transistors RoHS: Details Configuration: Single Collector- Emitter Voltage VCEO Max: 1.7 kV Collector-Emitter Saturation Voltage: 2.84 V Maximum Gate Emitter Voltage: +/- 20 V Continuous Collector Current at 25 C: 12 A Gate-Emitter Leakage Current: 100 nA Power Dissipation: 75 W Maximum Operating Temperature: + 150 C Package/Case: TO-268-3 Packaging: Tube Brand: IXYS Continuous Collector Current Ic Max: 36 A Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Series: IXBT6N170 Factory Pack Quantity: 30 Tradename: BIMOSFET |
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