IXBT6N170 Ixys IGBT Transistors 12 Amps 1700V 3.6 Rds

ProducentIxys
Part Number

IXBT6N170 (IXBT6N170)

Specifications

IGBT Transistors 12 Amps 1700V 3.6 Rds

Unit Price8,04 EUR
Minimum Order Quantity1
Tariff No.
Lead Time2 weeks
Weight and Dimension0.0045 Kg
DescriptionIXYS Product Category: IGBT Transistors RoHS:  Details Configuration: Single Collector- Emitter Voltage VCEO Max: 1.7 kV Collector-Emitter Saturation Voltage: 2.84 V Maximum Gate Emitter Voltage: +/- 20 V Continuous Collector Current at 25 C: 12 A Gate-Emitter Leakage Current: 100 nA Power Dissipation: 75 W Maximum Operating Temperature: + 150 C Package/Case: TO-268-3 Packaging: Tube Brand: IXYS Continuous Collector Current Ic Max: 36 A Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Series: IXBT6N170 Factory Pack Quantity: 30 Tradename: BIMOSFET
Datasheets
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