IXTH16N20D2 Ixys MOSFET N-CH 200V 16A TO-247 N-Channel 200V 16A (Tc) 695W (Tc) Through Hole TO-247 (IXTH)

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Part Number

IXTH16N20D2 (IXTH16N20D2)

Specifications

MOSFET N-CH 200V 16A TO-247 N-Channel 200V 16A (Tc) 695W (Tc) Through Hole TO-247 (IXTH)

Unit Price9,01 EUR
Minimum Order Quantity30
Tariff No.
Lead Time70 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer IXYS Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 208nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 5500pF @ 25V Vgs (Max) ±20V FET Feature Depletion Mode Power Dissipation (Max) 695W (Tc) Rds On (Max) @ Id, Vgs 73 mOhm @ 8A, 0V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 (IXTH) Package / Case TO-247-3
Datasheets
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