MUBW50-06A7 Ixys IXYS, MUBW50-06A7, IGBT Module, N-channel, Hex, 75 A max, 600 V, 23-Pin

ProducentIxys
Part Number

MUBW50-06A7 (MUBW5006A7)

Specifications

IXYS, MUBW50-06A7, IGBT Module, N-channel, Hex, 75 A max, 600 V, 23-Pin

Unit Price73,29 EUR
Minimum Order Quantity1
Tariff No.
Lead Time
Weight and Dimension
DescriptionChannel TypeN ConfigurationHex Dimensions107.5 x 45 x 17mm Height17mm Length107.5mm Maximum Collector Emitter Voltage600 V Maximum Continuous Collector Current75 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature+125 °C Minimum Operating Temperature-40 °C Mounting TypeScrew Pin Count23 Width45mm Product Details IGBT Modules, IXYS IGBT Modules The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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