MWI200-06A8 Ixys IXYS, MWI200-06A8, IGBT Module, N-channel, Hex, 225 A max, 600 V, 21-Pin
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| Producent | Ixys | | Part Number | MWI200-06A8 (MWI20006A8) |
| Specifications | IXYS, MWI200-06A8, IGBT Module, N-channel, Hex, 225 A max, 600 V, 21-Pin |
| Unit Price | 152,76 EUR |
| Minimum Order Quantity | 1 |
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| Weight and Dimension | |
| Description | Channel TypeN ConfigurationHex Dimensions122 x 62 x 17mm Height17mm Length122mm Maximum Collector Emitter Voltage600 V Maximum Continuous Collector Current225 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature+125 °C Minimum Operating Temperature-40 °C Mounting TypeScrew Pin Count21 Width62mm Product Details IGBT Modules, IXYS IGBT Modules The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. |
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