IXTR32P60P Ixys MOSFET -18 Amps -600V 0.385 Rds

ProducentIxys
Part Number

IXTR32P60P (IXTR32P60P)

Specifications

MOSFET -18 Amps -600V 0.385 Rds

Unit Price15,60 EUR
Minimum Order Quantity1
Tariff No.
Lead Time2 weeks
Weight and Dimension0.0053 Kg
DescriptionIXYS Product Category: MOSFET RoHS:  Details Id - Continuous Drain Current: - 18 A Vds - Drain-Source Breakdown Voltage: - 600 V Rds On - Drain-Source Resistance: 385 mOhms Transistor Polarity: P-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Vgs th - Gate-Source Threshold Voltage: - 4 V Qg - Gate Charge: 196 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 310 W Mounting Style: Through Hole Package/Case: TO-247-3 Packaging: Tube Brand: IXYS Channel Mode: Enhancement Fall Time: 33 ns Forward Transconductance - Min: 21 S Minimum Operating Temperature: - 55 C Rise Time: 27 ns Series: IXTR32P60 Factory Pack Quantity: 30 Tradename: PolarP Typical Turn-Off Delay Time: 95 ns
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