IXFA4N100P Ixys MOSFET 4 Amps 1000V
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| Producent | Ixys | | Part Number | IXFA4N100P (IXFA4N100P) |
| Specifications | MOSFET 4 Amps 1000V |
| Unit Price | 2,75 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | |
| Weight and Dimension | 0.0016 Kg |
| Description | IXYS Product Category: MOSFET RoHS: Details Id - Continuous Drain Current: 4 A Vds - Drain-Source Breakdown Voltage: 1 kV Rds On - Drain-Source Resistance: 3.3 Ohms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Vgs th - Gate-Source Threshold Voltage: 6 V Qg - Gate Charge: 26 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 150 W Mounting Style: SMD/SMT Package/Case: D2PAK-3 Packaging: Tube Brand: IXYS Channel Mode: Enhancement Fall Time: 50 ns Forward Transconductance - Min: 1.8 S Minimum Operating Temperature: - 55 C Rise Time: 36 ns Series: IXFA4N100 Factory Pack Quantity: 50 Tradename: Polar, HiPerFET Typical Turn-Off Delay Time: 37 ns |
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