IXTZ550N055T2 Ixys MOSFET 550Amps 55V
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| Producent | Ixys | | Part Number | IXTZ550N055T2 (IXTZ550N055T2) |
| Specifications | MOSFET 550Amps 55V |
| Unit Price | 25,84 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 2 weeks |
| Weight and Dimension | |
| Description | IXYS Product Category: MOSFET RoHS: Details Id - Continuous Drain Current: 550 A Vds - Drain-Source Breakdown Voltage: 55 V Rds On - Drain-Source Resistance: 1 Ohms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 595 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 600 W Mounting Style: SMD/SMT Package/Case: DE-475-6 Packaging: Tube Brand: IXYS Channel Mode: Enhancement Fall Time: 230 ns Forward Transconductance - Min: 95 s Minimum Operating Temperature: - 55 C Rise Time: 40 ns Series: IXTZ550N055 Factory Pack Quantity: 20 Tradename: TrenchT2, GigaMOS Typical Turn-Off Delay Time: 90 ns |
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