IXTH76P10T Ixys MOSFET P-CH 100V 76A TO-247 P-Channel 100V 76A (Tc) 298W (Tc) Through Hole TO-247 (IXTH)

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Part Number

IXTH76P10T (IXTH76P10T)

Specifications

MOSFET P-CH 100V 76A TO-247 P-Channel 100V 76A (Tc) 298W (Tc) Through Hole TO-247 (IXTH)

Unit Price6,06 EUR
Minimum Order Quantity30
Tariff No.
Lead Time42 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer IXYS Series TrenchP™ Packaging Tube Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 76A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 197nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 13700pF @ 25V Vgs (Max) ±15V FET Feature - Power Dissipation (Max) 298W (Tc) Rds On (Max) @ Id, Vgs 25 mOhm @ 500mA, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 (IXTH) Package / Case TO-247-3
Datasheets
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