IXTY08N100D2 Ixys MOSFET N-CH 1000V 800MA DPAK N-Channel 1000V (1kV) 800mA (Tc) 60W (Tc) Surface Mount TO-252, (D-Pak)
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| Producent | Ixys | | Part Number | IXTY08N100D2 (IXTY08N100D2) |
| Specifications | MOSFET N-CH 1000V 800MA DPAK N-Channel 1000V (1kV) 800mA (Tc) 60W (Tc) Surface Mount TO-252, (D-Pak) |
| Unit Price | 2,47 EUR |
| Minimum Order Quantity | 70 |
| Tariff No. | |
| Lead Time | 70 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer IXYS Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V (1kV) Current - Continuous Drain (Id) @ 25°C 800mA (Tc) Drive Voltage (Max Rds On, Min Rds On) - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 14.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 325pF @ 25V Vgs (Max) ±20V FET Feature Depletion Mode Power Dissipation (Max) 60W (Tc) Rds On (Max) @ Id, Vgs 21 Ohm @ 400mA, 0V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252, (D-Pak) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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