IXTT110N10L2 Ixys MOSFET N-CH 100V 110A TO-268 N-Channel 100V 110A (Tc) 600W (Tc) Surface Mount TO-268
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| Producent | Ixys | | Part Number | IXTT110N10L2 (IXTT110N10L2) |
| Specifications | MOSFET N-CH 100V 110A TO-268 N-Channel 100V 110A (Tc) 600W (Tc) Surface Mount TO-268 |
| Unit Price | 14,48 EUR |
| Minimum Order Quantity | 30 |
| Tariff No. | |
| Lead Time | 56 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer IXYS Series Linear L2™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 110A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 10500pF @ 25V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 600W (Tc) Rds On (Max) @ Id, Vgs 18 mOhm @ 55A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-268 Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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