IXTA08N100P Ixys MOSFET N-CH 1000V 0.8A TO-263 N-Channel 1000V (1kV) 800mA (Tc) 42W (Tc) Surface Mount TO-263 (IXTA)

ProducentIxys
Part Number

IXTA08N100P (IXTA08N100P)

Specifications

MOSFET N-CH 1000V 0.8A TO-263 N-Channel 1000V (1kV) 800mA (Tc) 42W (Tc) Surface Mount TO-263 (IXTA)

Unit Price1,74 EUR
Minimum Order Quantity50
Tariff No.
Lead Time56 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer IXYS Series Polar™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V (1kV) Current - Continuous Drain (Id) @ 25°C 800mA (Tc) Vgs(th) (Max) @ Id 4V @ 50µA Gate Charge (Qg) (Max) @ Vgs 11.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 240pF @ 25V FET Feature - Power Dissipation (Max) 42W (Tc) Rds On (Max) @ Id, Vgs 20 Ohm @ 500mA, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (IXTA) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Datasheets
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