IXTP1R4N100P Ixys MOSFET N-CH 1000V 1.4A TO-220 N-Channel 1000V (1kV) 1.4A (Tc) 63W (Tc) Through Hole TO-220AB

ProducentIxys
Part Number

IXTP1R4N100P (IXTP1R4N100P)

Specifications

MOSFET N-CH 1000V 1.4A TO-220 N-Channel 1000V (1kV) 1.4A (Tc) 63W (Tc) Through Hole TO-220AB

Unit Price1,75 EUR
Minimum Order Quantity50
Tariff No.
Lead Time56 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer IXYS Series Polar™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V (1kV) Current - Continuous Drain (Id) @ 25°C 1.4A (Tc) Vgs(th) (Max) @ Id 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs 17.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 450pF @ 25V FET Feature - Power Dissipation (Max) 63W (Tc) Rds On (Max) @ Id, Vgs 11 Ohm @ 500mA, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3
Datasheets
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