IXTY1R4N100P Ixys MOSFET N-CH 1000V 1.4A TO-252 N-Channel 1000V (1kV) 1.4A (Tc) 63W (Tc) Surface Mount TO-252, (D-Pak)
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| Producent | Ixys | | Part Number | IXTY1R4N100P (IXTY1R4N100P) |
| Specifications | MOSFET N-CH 1000V 1.4A TO-252 N-Channel 1000V (1kV) 1.4A (Tc) 63W (Tc) Surface Mount TO-252, (D-Pak) |
| Unit Price | 1,85 EUR |
| Minimum Order Quantity | 70 |
| Tariff No. | |
| Lead Time | 56 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer IXYS Series Polar™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V (1kV) Current - Continuous Drain (Id) @ 25°C 1.4A (Tc) Vgs(th) (Max) @ Id 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs 17.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 450pF @ 25V FET Feature - Power Dissipation (Max) 63W (Tc) Rds On (Max) @ Id, Vgs 11 Ohm @ 500mA, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252, (D-Pak) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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