IXTA1N100P Ixys MOSFET N-CH 1000V 1A TO-263 N-Channel 1000V (1kV) 1A (Tc) 50W (Tc) Surface Mount TO-263 (IXTA)
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| Producent | Ixys | | Part Number | IXTA1N100P (IXTA1N100P) |
| Specifications | MOSFET N-CH 1000V 1A TO-263 N-Channel 1000V (1kV) 1A (Tc) 50W (Tc) Surface Mount TO-263 (IXTA) |
| Unit Price | 1,51 EUR |
| Minimum Order Quantity | 50 |
| Tariff No. | |
| Lead Time | 56 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer IXYS Series Polar™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V (1kV) Current - Continuous Drain (Id) @ 25°C 1A (Tc) Vgs(th) (Max) @ Id 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs 15.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 331pF @ 25V FET Feature - Power Dissipation (Max) 50W (Tc) Rds On (Max) @ Id, Vgs 15 Ohm @ 500mA, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (IXTA) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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