IXTP2N100P Ixys MOSFET N-CH 1000V 2A TO-220 N-Channel 1000V (1kV) 2A (Tc) 86W (Tc) Through Hole TO-220AB
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| Producent | Ixys | | Part Number | IXTP2N100P (IXTP2N100P) |
| Specifications | MOSFET N-CH 1000V 2A TO-220 N-Channel 1000V (1kV) 2A (Tc) 86W (Tc) Through Hole TO-220AB |
| Unit Price | 2,23 EUR |
| Minimum Order Quantity | 50 |
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| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer IXYS Series Polar™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V (1kV) Current - Continuous Drain (Id) @ 25°C 2A (Tc) Vgs(th) (Max) @ Id 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 24.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 655pF @ 25V FET Feature - Power Dissipation (Max) 86W (Tc) Rds On (Max) @ Id, Vgs 7.5 Ohm @ 500mA, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
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