IXTA3N100D2 Ixys MOSFET N-CH 1000V 3A D2PAK N-Channel 1000V (1kV) 3A (Tc) 125W (Tc) Surface Mount TO-263 (IXTA)
| |
|
| Producent | Ixys | | Part Number | IXTA3N100D2 (IXTA3N100D2) |
| Specifications | MOSFET N-CH 1000V 3A D2PAK N-Channel 1000V (1kV) 3A (Tc) 125W (Tc) Surface Mount TO-263 (IXTA) |
| Unit Price | 3,17 EUR |
| Minimum Order Quantity | 50 |
| Tariff No. | |
| Lead Time | 56 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer IXYS Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V (1kV) Current - Continuous Drain (Id) @ 25°C 3A (Tc) Drive Voltage (Max Rds On, Min Rds On) - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 37.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 1020pF @ 25V Vgs (Max) ±20V FET Feature Depletion Mode Power Dissipation (Max) 125W (Tc) Rds On (Max) @ Id, Vgs 5.5 Ohm @ 1.5A, 0V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (IXTA) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Datasheets | |
E-shop Coming Soon
 | |
E-shop Coming Soon
| |
Related Parts
| |
|
