IXTP3N100D2 Ixys MOSFET N-CH 1000V 3A TO220AB N-Channel 1000V (1kV) 3A (Tc) 125W (Tc) Through Hole TO-220AB
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| Producent | Ixys | | Part Number | IXTP3N100D2 (IXTP3N100D2) |
| Specifications | MOSFET N-CH 1000V 3A TO220AB N-Channel 1000V (1kV) 3A (Tc) 125W (Tc) Through Hole TO-220AB |
| Unit Price | 2,83 EUR |
| Minimum Order Quantity | 50 |
| Tariff No. | |
| Lead Time | 56 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer IXYS Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V (1kV) Current - Continuous Drain (Id) @ 25°C 3A (Tc) Drive Voltage (Max Rds On, Min Rds On) - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 37.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 1020pF @ 25V Vgs (Max) ±20V FET Feature Depletion Mode Power Dissipation (Max) 125W (Tc) Rds On (Max) @ Id, Vgs 5.5 Ohm @ 1.5A, 0V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
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