IXFP130N10T2 Ixys MOSFET N-CH 100V 130A TO-220 N-Channel 100V 130A (Tc) 360W (Tc) Through Hole TO-220AB

ProducentIxys
Part Number

IXFP130N10T2 (IXFP130N10T2)

Specifications

MOSFET N-CH 100V 130A TO-220 N-Channel 100V 130A (Tc) 360W (Tc) Through Hole TO-220AB

Unit Price2,82 EUR
Minimum Order Quantity50
Tariff No.
Lead Time56 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer IXYS Series GigaMOS™, HiPerFET™, TrenchT2™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 130A (Tc) Vgs(th) (Max) @ Id 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 6600pF @ 25V FET Feature - Power Dissipation (Max) 360W (Tc) Rds On (Max) @ Id, Vgs 9.1 mOhm @ 65A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3
Datasheets
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