IXTP160N10T Ixys MOSFET N-CH 100V 160A TO-220 N-Channel 100V 160A (Tc) 430W (Tc) Through Hole TO-220AB

ProducentIxys
Part Number

IXTP160N10T (IXTP160N10T)

Specifications

MOSFET N-CH 100V 160A TO-220 N-Channel 100V 160A (Tc) 430W (Tc) Through Hole TO-220AB

Unit Price3,03 EUR
Minimum Order Quantity50
Tariff No.
Lead Time56 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer IXYS Series TrenchMV™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 160A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 132nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 6600pF @ 25V Vgs (Max) ±30V FET Feature - Power Dissipation (Max) 430W (Tc) Rds On (Max) @ Id, Vgs 7 mOhm @ 25A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3
Datasheets
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