IXTQ180N10T Ixys MOSFET N-CH 100V 180A TO-3P N-Channel 100V 180A (Tc) 480W (Tc) Through Hole TO-3P
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| Producent | Ixys | | Part Number | IXTQ180N10T (IXTQ180N10T) |
| Specifications | MOSFET N-CH 100V 180A TO-3P N-Channel 100V 180A (Tc) 480W (Tc) Through Hole TO-3P |
| Unit Price | 4,03 EUR |
| Minimum Order Quantity | 30 |
| Tariff No. | |
| Lead Time | 56 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer IXYS Series TrenchMV™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 151nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 6900pF @ 25V Vgs (Max) ±30V FET Feature - Power Dissipation (Max) 480W (Tc) Rds On (Max) @ Id, Vgs 6.4 mOhm @ 25A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3P Package / Case TO-3P-3, SC-65-3 |
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