IXTP02N120P Ixys MOSFET N-CH 1200V 0.2A TO-220 N-Channel 1200V (1.2kV) 200mA (Tc) 33W (Tc) Through Hole TO-220AB
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Producent | Ixys | Part Number | IXTP02N120P (IXTP02N120P) |
Specifications | MOSFET N-CH 1200V 0.2A TO-220 N-Channel 1200V (1.2kV) 200mA (Tc) 33W (Tc) Through Hole TO-220AB |
Unit Price | 1,27 EUR |
Minimum Order Quantity | 50 |
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Lead Time | 56 weeks |
Weight and Dimension | |
Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer IXYS Series Polar™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C 200mA (Tc) Vgs(th) (Max) @ Id 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs 4.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 104pF @ 25V FET Feature - Power Dissipation (Max) 33W (Tc) Rds On (Max) @ Id, Vgs 75 Ohm @ 100mA, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
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