IXTA08N120P Ixys MOSFET N-CH 1200V 0.8A TO-263 N-Channel 1200V (1.2kV) 800mA (Tc) 50W (Tc) Surface Mount TO-263 (IXTA)
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Producent | Ixys | Part Number | IXTA08N120P (IXTA08N120P) |
Specifications | MOSFET N-CH 1200V 0.8A TO-263 N-Channel 1200V (1.2kV) 800mA (Tc) 50W (Tc) Surface Mount TO-263 (IXTA) |
Unit Price | 1,85 EUR |
Minimum Order Quantity | 50 |
Tariff No. | |
Lead Time | 56 weeks |
Weight and Dimension | |
Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer IXYS Series Polar™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C 800mA (Tc) Vgs(th) (Max) @ Id 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 333pF @ 25V FET Feature - Power Dissipation (Max) 50W (Tc) Rds On (Max) @ Id, Vgs 25 Ohm @ 500mA, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (IXTA) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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