IXFA3N120TRL Ixys MOSFET N-CH 1200V 3A TO-263 N-Channel 1200V (1.2kV) 3A (Tc) 200W (Tc) Surface Mount TO-263
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| Producent | Ixys | | Part Number | IXFA3N120TRL (IXFA3N120TRL) |
| Specifications | MOSFET N-CH 1200V 3A TO-263 N-Channel 1200V (1.2kV) 3A (Tc) 200W (Tc) Surface Mount TO-263 |
| Unit Price | 6,57 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 56 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer IXYS Series HiPerFET™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C 3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1050pF @ 25V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 200W (Tc) Rds On (Max) @ Id, Vgs 4.5 Ohm @ 1.5A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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