IXFP110N15T2 Ixys MOSFET N-CH 150V 110A TO-220 N-Channel 150V 110A (Tc) 480W (Tc) Through Hole TO-220AB

ProducentIxys
Part Number

IXFP110N15T2 (IXFP110N15T2)

Specifications

MOSFET N-CH 150V 110A TO-220 N-Channel 150V 110A (Tc) 480W (Tc) Through Hole TO-220AB

Unit Price2,15 EUR
Minimum Order Quantity50
Tariff No.
Lead Time56 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer IXYS Series GigaMOS™, HiPerFET™, TrenchT2™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 110A (Tc) Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 8600pF @ 25V FET Feature - Power Dissipation (Max) 480W (Tc) Rds On (Max) @ Id, Vgs 13 mOhm @ 55A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3
Datasheets
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