IXTA1N200P3HV Ixys MOSFET N-CH 2000V 1A TO-263HV N-Channel 2000V (2kV) 1A (Tc) 125W (Tc) Surface Mount TO-263 (IXTA)
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| Producent | Ixys | | Part Number | IXTA1N200P3HV (IXTA1N200P3HV) |
| Specifications | MOSFET N-CH 2000V 1A TO-263HV N-Channel 2000V (2kV) 1A (Tc) 125W (Tc) Surface Mount TO-263 (IXTA) |
| Unit Price | 17,16 EUR |
| Minimum Order Quantity | 50 |
| Tariff No. | |
| Lead Time | 56 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer IXYS Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 2000V (2kV) Current - Continuous Drain (Id) @ 25°C 1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 23.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 646pF @ 25V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 125W (Tc) Rds On (Max) @ Id, Vgs 40 Ohm @ 500mA, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (IXTA) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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