IXFR120N20 Ixys MOSFET N-CH 200V 105A ISOPLUS247 N-Channel 200V 105A (Tc) 417W (Tc) Through Hole ISOPLUS247™

ProducentIxys
Part Number

IXFR120N20 (IXFR120N20)

Specifications

MOSFET N-CH 200V 105A ISOPLUS247 N-Channel 200V 105A (Tc) 417W (Tc) Through Hole ISOPLUS247™

Unit Price20,06 EUR
Minimum Order Quantity30
Tariff No.
Lead Time56 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer IXYS Series HiPerFET™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 105A (Tc) Vgs(th) (Max) @ Id 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs 360nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 9100pF @ 25V FET Feature - Power Dissipation (Max) 417W (Tc) Rds On (Max) @ Id, Vgs 17 mOhm @ 60A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ISOPLUS247™ Package / Case ISOPLUS247™
Datasheets
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