IXTK110N20L2 Ixys MOSFET N-CH 200V 110A TO-264 N-Channel 200V 110A (Tc) 960W (Tc) Through Hole TO-264 (IXTK)

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Part Number

IXTK110N20L2 (IXTK110N20L2)

Specifications

MOSFET N-CH 200V 110A TO-264 N-Channel 200V 110A (Tc) 960W (Tc) Through Hole TO-264 (IXTK)

Unit Price22,38 EUR
Minimum Order Quantity25
Tariff No.
Lead Time56 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer IXYS Series Linear L2™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 110A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs 500nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 23000pF @ 25V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 960W (Tc) Rds On (Max) @ Id, Vgs 24 mOhm @ 55A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-264 (IXTK) Package / Case TO-264-3, TO-264AA
Datasheets
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