IXTQ48N20T Ixys MOSFET N-CH 200V 48A TO-3P N-Channel 200V 48A (Tc) 250W (Tc) Through Hole TO-3P

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Part Number

IXTQ48N20T (IXTQ48N20T)

Specifications

MOSFET N-CH 200V 48A TO-3P N-Channel 200V 48A (Tc) 250W (Tc) Through Hole TO-3P

Unit Price2,28 EUR
Minimum Order Quantity30
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DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer IXYS Series Trench™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 48A (Tc) Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 3090pF @ 25V FET Feature - Power Dissipation (Max) 250W (Tc) Rds On (Max) @ Id, Vgs 50 mOhm @ 24A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3P Package / Case TO-3P-3, SC-65-3
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